?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FGB20N60SFD rev. c0 FGB20N60SFD 600 v, 20 a field stop igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c40 a collector current @ t c = 100 o c20 a i cm (1) pulsed collector current @ t c = 25 o c 60 a i f diode forward current @ t c = 25 o c20 a diode forward current @ t c = 100 o c10 a i fm(1) pulsed diode maximum forward current 60 a p d maximum power dissipation @ t c = 25 o c208 w maximum power dissipation @ t c = 100 o c83 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c g c e e g collector (flange) to-263ab/d 2 -pak c FGB20N60SFD 600 v, 20 a field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) = 2.2 v @ i c = 20 a ? high input impedance ? fast switching : e off = 8 uj/a ?rohs compliant applications ? solar inverter, ups, welder, pfc general description using novel field stop igbt technology, fairchild ? ?s field stop igbts offer the optimum performance for solar inverter, ups, welder and pfc applications where low conduction and switch- ing losses are essential.
FGB20N60SFD 600 v, 20 a field stop igbt ?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com FGB20N60SFD rev. c0 thermal characteristics notes: 2: mounted on 1? square pcb (fr4 or g-10 material) package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.6 o c / w r ? jc (diode) thermal resistance, junction to case - 2.6 o c / w r ? ja thermal resistance, junction to ambient (pcb mount)(2) - 40 o c / w device marking device package rel size tape width quantity FGB20N60SFD FGB20N60SFD to-263ab/d2-pak 13? dia - 800 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 4.0 5.0 6.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -2.22.8v i c = 20a , v ge = 15v, t c = 125 o c -2.4- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 940 - pf c oes output capacitance - 110 - pf c res reverse transfer capacitance - 40 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -13- ns t r rise time - 16 - ns t d(off) turn-off delay time - 90 - ns t f fall time - 24 48 ns e on turn-on switching loss - 0.37 - mj e off turn-off switching loss - 0.16 - mj e ts total switching loss - 0.53 - mj t d(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 o c -12- ns t r rise time - 16 - ns t d(off) turn-off delay time - 95 - ns t f fall time - 28 - ns e on turn-on switching loss - 0.4 - mj e off turn-off switching loss - 0.28 - mj e ts total switching loss - 0.69 - mj
FGB20N60SFD 600 v, 20 a field stop igbt ?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FGB20N60SFD rev. c0 electrical characteristi cs of the igbt t c = 25c unless otherwise noted electrical characteristi cs of the diode t c = 25c unless otherwise noted q g total gate charge v ce = 400v, i c = 20a, v ge = 15v -65-nc q ge gate to emitter charge - 7 - nc q gc gate to collector charge - 33 - nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 10a t c = 25 o c- 1.9 2.5 v t c = 125 o c- 1.7 - t rr diode reverse recovery time i f =10a, di f /dt = 200a/ ? s t c = 25 o c- 34 - ns t c = 125 o c- 57 - q rr diode reverse recovery charge t c = 25 o c- 41 - nc t c = 125 o c- 96 -
FGB20N60SFD 600 v, 20 a field stop igbt ?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FGB20N60SFD rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0.01.53.04.56.0 0 20 40 60 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.01.53.04.56.0 0 20 40 60 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 20 40 60 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 4681012 0 20 40 60 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1 2 3 4 40a 20a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emitter case temperature, t c [ o c] 0 4 8 121620 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGB20N60SFD 600 v, 20 a field stop igbt ?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FGB20N60SFD rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resi stance 0 4 8 121620 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0 4 8 121620 0 4 8 12 16 20 40a i c = 10a 2 0a common emitter t c = 125 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0.1 1 10 0 500 1000 1500 2000 2500 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 020406080 0 3 6 9 12 15 common emitter t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 102030405060 5 10 100 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 1 10 100 1000 0.1 1 10 100 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v]
FGB20N60SFD 600 v, 20 a field stop igbt ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FGB20N60SFD rev. c0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 102030405060 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 0 10203040 3 10 100 200 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 0 10203040 10 100 300 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 102030405060 0.1 1 3 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 1 10 100 1000 1 10 80 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 010203040 0.02 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a]
FGB20N60SFD 600 v, 20 a field stop igbt ?2011 fairchild semiconductor corporation 7 www.fairchildsemi.com FGB20N60SFD rev. c0 typical performance characteristics figure 19. forward characteristics figure 20. reverse current figure 21. stored charge figure 22. reverse recovery time figure 23.transient thermal impedance of igbt 0 100 200 300 400 500 600 1e-3 0.01 0.1 1 10 100 t c = 125 o c t c = 25 o c t c = 75 o c reverse current , i r [ ? a] reverse voltage, v r [v] 01234 0.1 1 10 40 t j = 75 o c t j = 25 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a] 0 5 10 15 20 10 20 30 40 50 60 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forward current, i f [a] 0 5 10 15 20 10 20 30 40 50 60 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGB20N60SFD 600 v, 20 a field stop igbt ?2011 fairchild semiconductor corporation 8 www.fairchildsemi.com FGB20N60SFD rev. c0 mechanical dimensions to-263ab/d 2_ pak
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